Characterization of the Stability of Indium Tin Oxide and Functional Layers for Semitransparent Back‐Contact Applications on Cu(in,Ga)Se₂Solar Cells

Herein, a detailed study of the stability different ITO-based back-contact configurations (including bare ITO contacts and functionalized with nanometric Mo, MoSe2, MoS2 layers) under coevaporation processes developed for synthesis high-efficiency Cu(In,Ga)Se2 (CIGSe) solar cells is reported. The results show that layers can be used as efficient back process temperatures 480 ºC. However, higher produce an amorphous In–Se phase at surface reduces transparency in visible region. This accompanied by degradation cells’ efficiency. Inclusion Mo functional layer leads to formation MoSe2 interfacial during process, which improves efficiency, achieving device efficiencies similar those obtained reference fabricated standard contacts. Optimization initial thickness contact transparency, optical 50% relevant decrease reflectivity CIGSe devices, confirming potential these development semitransparent devices improved aesthetic quality without compromising performance.